Deterministic Nucleation Enables Controlled Growth of 2D Semiconductors (KAIST, TDS, Hanyang et al.)

Researchers at KAIST, TDS Innovation, Hanyang University, UNIST, et al. published a technical paper titled “Spatially deterministic nucleation of 2D semiconductors by etching flux.” Abstract Excerpt: “Nucleation control is fundamental to semiconductor deposition, governing when, where and how crystalline materials form. Conventional strategies can regulate nucleation density and, through area-selective growth, confine deposition to designated... read more The post Deterministic Nucleation Enables Controlled Growth of 2D Semiconductors (KAIST, TDS, Hanyang et al.) appeared first on Semiconductor Engineering. ]]>