关键参数
| Input Capacitance(Ciss) | 1.35nF |
|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Number | 1 N-channel |
| Gate Charge(Qg) | 52nC@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| Current - Continuous Drain(Id) | 33A |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 280pF |
| Pd - Power Dissipation | 130W |
| RDS(on) | 44mΩ@10V |
替代与关注项
暂无可比替代条目。器件替代涉及封装、参数与批次一致性，不做自动推荐；可到替代料匹配工具按参数做进一步比对。
