关键参数
| Operating Temperature | -55℃~+150℃ |
|---|---|
| Input Capacitance(Ciss) | 1.7nF@25V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Gate Charge(Qg) | 20nC |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF@25V |
| Current - Continuous Drain(Id) | 30A |
| Drain to Source Voltage | 60V |
| Pd - Power Dissipation | 40W |
| RDS(on) | 30mΩ@10V,15A |
替代与关注项
暂无可比替代条目。器件替代涉及封装、参数与批次一致性，不做自动推荐；可到替代料匹配工具按参数做进一步比对。
