| 参数 | IRLML6402GPBF-HXYHXY MOSFET | |
|---|---|---|
| Operating Temperature | -55℃~+150℃ | |
| Type | P-Channel | |
| Input Capacitance(Ciss) | 740pF | |
| Configuration | Standalone | |
| Number | 1 P-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Gate Charge(Qg) | 7.8nC@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF | |
| Current - Continuous Drain(Id) | 4.2A | |
| Drain to Source Voltage | 20V | |
| 替代参考 | — |
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说明：器件参数为公开接口原值，产业条目为站内录入的少量精选；标签相同的项才对齐比较，正式选型请以厂商数据手册与板厂工艺确认为准。
